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PESD5V0S2BT
Low capacitance bi-directional double ESD protection diode in SOT23 package
Rev. 02 -- 27 May 2004 Product data sheet
1. Product profile
1.1 General description
Low capacitance bi-directional double ESD protection diode in the small SOT23 plastic package designed to protect 2 data lines from the damage caused by Electro Static Discharge (ESD) and other transients.
1.2 Features
s s s s s s s s Bi-directional ESD protection of 2 lines Low diode capacitance Max. peak pulse power: Ppp = 130 W at tp = 8/20 s Low clamping voltage: VCL(R) = 14 V at Ipp = 12 A Ultra low leakage current: IRM = 5 nA at VRWM = 5 V ESD protection > 30 kV IEC 61000-4-2; level 4 (ESD) IEC-61000-4-5 (surge); Ipp = 12 A at tp = 8/20 s.
1.3 Applications
s s s s s Cellular handsets and accessories Portable electronics Computers and peripherals Communication systems Audio and video equipment.
1.4 Quick reference data
Table 1: Symbol VRWM Cd Quick reference data Parameter reverse stand-off voltage diode capacitance number of protected lines f = 1 MHz; VR = 0 V Conditions Min Typ 5 35 2 Max Unit V pF
Philips Semiconductors
PESD5V0S2BT
Low capacitance bi-directional double ESD protection diode
2. Pinning information
Table 2: Pin 1 2 3 Discrete Pinning Description cathode 1 cathode 2 double cathode
3 1 2
SOT23
Simplified outline
3
Symbol
1
2
sym031
3. Ordering information
Table 3: Ordering information Package Name PESD5V0S2BT Description plastic surface mounted package; 3 leads Version SOT23 Type number
4. Marking
Table 4: Marking Marking code [1] *G5 Type number PESD5V0S2BT
[1] * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China.
5. Limiting values
Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per diode Ppp Ipp Tj Tamb Tstg
[1] [2]
Parameter peak pulse power peak pulse current junction temperature operating ambient temperature storage temperature
Conditions 8/20 s pulse 8/20 s pulse
[1] [2] [1] [2]
Min -65 -65
Max 130 12 150 +150 +150
Unit W A C C C
Non-repetitive current pulse 8/20 s exponential decay waveform; see Figure 1. Measured between pins 1 to 3 or pin 2 to 3.
9397 750 13344
(c) Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 -- 27 May 2004
2 of 11
Philips Semiconductors
PESD5V0S2BT
Low capacitance bi-directional double ESD protection diode
ESD maximum ratings Parameter electro static discharge capability Conditions IEC 61000-4-2 (contact discharge) HBM MIL-Std 883
[1] [2]
Table 6: Symbol ESD
Value 30 10
Unit kV kV
[1] [2]
Device stressed with ten non-repetitive Electro Static Discharge (ESD) pulses; see Figure 2. Measured between pins 1 to 3 or pin 2 to 3.
Table 7: Standard
ESD standards compliance Conditions > 15 kV (air); > 8 kV (contact) > 4 kV
IEC 61000-4-2; level 4 (ESD); see Figure 2 HBM MIL-Std 883; class 3
001aaa631
120 Ipp (%) 80 100 % Ipp; 8 s
001aaa630
Ipp 100 % 90 %
e-t 50 % Ipp; 20 s
40
10 % tr = 0.7 to 1 ns 0 10 20 30 t (s) 40 30 ns 60 ns t
0
Fig 1. 8/20 s pulse waveform according to IEC 61000-4-5.
Fig 2. ElectroStatic Discharge (ESD) pulse waveform according to IEC 61000-4-2.
9397 750 13344
(c) Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 -- 27 May 2004
3 of 11
Philips Semiconductors
PESD5V0S2BT
Low capacitance bi-directional double ESD protection diode
6. Characteristics
Table 8: Electrical characteristics Tamb = 25 C unless otherwise specified. Symbol Parameter Per diode VRWM IRM V(CL)R VBR rdiff Cd
[1] [2]
Conditions
Min -
Typ 5 35
Max 5 100 10 14 9.5 50 45
Unit V nA V V V pF
reverse stand-off voltage reverse leakage current clamping voltage breakdown voltage differential resistance diode capacitance VRWM = 5 V Ipp = 1 A Ipp = 12 A IR = 1 mA IR = 1 mA f = 1 MHz; VR = 0 V
[1] [2] [1] [2]
5.5 -
Non-repetitive current pulse 8/20 s exponential decay waveform, see Figure 3. Measured from pin 1 to 3 or pin 2 to 3.
103
001aaa632
1.2 Ppp
001aaa633
Ppp (W)
Ppp(25 C) 0.8
102
0.4
10 1 10
102
103 t p (s)
104
0 0 50 100 150 Tj (C) 200
Tamb = 25 C. tp = 8/20 s exponential decay waveform; see Figure 1.
Tamb = 25 C.
Fig 3. Peak pulse power dissipation as a function of pulse time; typical values.
Fig 4. Relative variation of peak pulse power as a function of junction temperature; typical values.
9397 750 13344
(c) Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 -- 27 May 2004
4 of 11
Philips Semiconductors
PESD5V0S2BT
Low capacitance bi-directional double ESD protection diode
38 Cd (pF) 34
001aaa634
102 IR IR(85 C) 10
001aaa635
30
1 26
22 0 1 2 3 4 VR (V) 5
10-1 75 100 125 Tj (C) 150
Tamb = 25 C; f = 1 MHz.
IR < 1 nA measured at Tamb = 25 C.
Fig 5. Diode capacitance as a function of reverse voltage; typical values.
Fig 6. Relative variation of reverse leakage current as a function of junction temperature; typical values.
9397 750 13344
(c) Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 -- 27 May 2004
5 of 11
Philips Semiconductors
PESD5V0S2BT
Low capacitance bi-directional double ESD protection diode
ESD TESTER RZ CZ
450
RG 223/U 50 coax
4 GHz DIGITAL OSCILLOSCOPE 10x ATTENUATOR
50
IEC 61000-4-2 network CZ = 150 pF; RZ = 330
D.U.T.: PESD5V0S2BT
vertical scale = 200 V/div horizontal scale = 50 ns/div
vertical scale = 10 V/div horizontal scale = 50 ns/div
GND
GND
unclamped +1 kV ESD voltage waveform (IEC61000-4-2 network)
clamped +1 kV ESD voltage waveform (IEC61000-4-2 network)
GND
GND
vertical scale = 200 V/div horizontal scale = 50 ns/div unclamped -1 kV ESD voltage waveform (IEC61000-4-2 network)
vertical scale = 10 V/div horizontal scale = 50 ns/div clamped -1 kV ESD voltage waveform (IEC61000-4-2 network)
coa006
Fig 7. ESD clamping test set-up and waveforms.
9397 750 13344
(c) Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 -- 27 May 2004
6 of 11
Philips Semiconductors
PESD5V0S2BT
Low capacitance bi-directional double ESD protection diode
7. Application information
The PESD5V0S2BT is designed for the bi-directional protection of 2 lines from the damage caused by Electro Static Discharge (ESD) and surge pulses. The PESD5V0S2BT may be used on lines where the signal polarities are above and below ground. The PESD5V0S2BT provides a surge capability of 130 Watts peak Ppp per line for an 8/20 s waveform.
line 1 to be protected line 2 to be protected
PESD5V0S2BT
GND
001aaa636
Fig 8. Typical application for bi-directional protection of two lines.
Circuit board layout and protection device placement: Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The following guidelines are recommended: 1. Place the PESD5V0S2BT as close to the input terminal or connector as possible. 2. The path length between the PESD5V0S2BT and the protected line should be minimized. 3. Keep parallel signal paths to a minimum. 4. Avoid running protected conductors in parallel with unprotected conductors. 5. Minimize all printed-circuit board conductive loops including power and group loops. 6. Minimize the length of the transient return path to ground. 7. Avoid using shared transient return paths to a common ground point. 8. Ground planes should be used whenever possible. For multilayer printed-circuit boards, use ground vias.
9397 750 13344
(c) Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 -- 27 May 2004
7 of 11
Philips Semiconductors
PESD5V0S2BT
Low capacitance bi-directional double ESD protection diode
8. Package outline
Plastic surface mounted package; 3 leads SOT23
D
B
E
A
X
HE
vMA
3
Q A A1
1
e1 e bp
2
wMB detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1
OUTLINE VERSION SOT23
REFERENCES IEC JEDEC TO-236AB EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28 99-09-13
Fig 9. Package outline.
9397 750 13344 (c) Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 -- 27 May 2004
8 of 11
Philips Semiconductors
PESD5V0S2BT
Low capacitance bi-directional double ESD protection diode
9. Revision history
Table 9: Revision history Release date 20040527 20040517 Data sheet status Product data Product data Change notice Order number 9397 750 13344 9397 750 12901 Supersedes PESD5V0S2BT_1 Document ID PESD5V0S2BT_2 PESD5V0S2BT_1
9397 750 13344
(c) Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 -- 27 May 2004
9 of 11
Philips Semiconductors
PESD5V0S2BT
Low capacitance bi-directional double ESD protection diode
10. Data sheet status
Level I II Data sheet status [1] Objective data Preliminary data Product status [2] [3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
III
Product data
Production
[1] [2] [3]
Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
11. Definitions
Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
12. Disclaimers
Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
13. Contact information
For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
9397 750 13344
(c) Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 -- 27 May 2004
10 of 11
Philips Semiconductors
PESD5V0S2BT
Low capacitance bi-directional double ESD protection diode
14. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Application information. . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information . . . . . . . . . . . . . . . . . . . . 10
(c) Koninklijke Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 27 May 2004 Document order number: 9397 750 13344
Published in The Netherlands

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